The fabrication of LaB6-coated silicon spindt field emission arrays was reported, in which standard semiconductor techniques including oxidation, photolithography, dry etching and oxidation sharpening on the n-type silicon were used. In fabricated silicon spindt arrays, the height was about 1μm. The interval between each silicon spindt was 6μm, and the cutting-edge radius of curvature was about 50nm, the tip-angle was about 56º and the density of arrays was about 106/cm2. The LaB6 film was then deposited onto the silicon spindt by electron beam evaporation to reduce the work function and enhance the capability of resisting ion bombardment. The film thickness was about 50nm, and the radius of curvature was about 111nm. The X-ray diffraction analysis results indicated that LaB6 with good crystallization was obtained by electron beam evaporation, The I-V characteristics and stability of field emission of silicon array and LaB6 filmed-arrays were studied. The results showed that silicon coated with LaB6 film had good and stable emission characteristics. The total field emission current from the LaB6 film arrays reached 125μA, which was 125 times better than pure silicon spindt arrays.

Field Emission Characteristics of LaB6 Film. Zhu, B.J., Chen, Z.X., Zhang, Q., Wang, X.J., Yu, T.: Chinese Journal of Luminescence, 2008, 29[3], 561-6