Field emitter arrays were developed by using the transfer mold technique to fabricate sharp uniform and low operating-voltage field emitter arrays using low work function materials. Because of the sharpening effect on the tips by thermally oxidized SiO2 layer of the molds, emitter tip radii could be less than 10nm. The turn-on voltages of LaB6 field emitter arrays were made 110 to 130V lower than those of conventional Mo field emitter arrays by decreasing the surface barrier heights for field emission, given the same emitter shape. That of gated LaB6 field emitter arrays was as low as 28V; even without a high-vacuum baking treatment.

Field Electron Emission from LaB6 and TiN Emitter Arrays Fabricated by Transfer Mold Technique. Nakamoto, M., Fukuda, K.: Applied Surface Science, 2002, 202[3-4], 289-94