The Hall effect was investigated in single crystals at 2 to 300K in magnetic fields of H < 80kOe. The Hall coefficient RH and resistivity ρ were measured by using the sample rotation technique in a fixed magnetic field perpendicular to the axis of rotation (<110>). A very similar temperature behavior of RH(T) with the step-like anomaly near to 25K was established for the diamagnetic material at intermediate temperatures >10K. The temperature-independent behaviour of the Hall coefficient of about -3.6·x 10-4cm3/C, observed at 10 to 20K permitted an estimation to be made of the reduced charge carrier concentration: n/nR ∼1.21±0.03 (where nR was the concentration of La ions). The Hall mobility, RH(T)/ρ(T), was shown to be well fitted by the power law ∼T-α where α ∼1.5 at 50 to 300K and α ≈ 3 at 20 to 50K.

Hall Effect in LaB6 and NdB6. Anisimov, M.A., Bogach, A.V., Glushkov, V.V., Demishev, S.V., Samarin, N.A., Shitsevalova, N.Y., Sluchanko, N.E.: Solid State Phenomena, 2009, 152-153, 525-8