Films which were 2000 to 5000Å thick were prepared on glass substrates by rf magnetron sputtering. The effects of Ar discharge gas pressures, ranging from 5.3 to 5.3 x 10-2Pa, on the structural, electrical and mechanical properties were examined. The structural characteristics were analyzed using X-ray diffraction and emission spectrochemical techniques. The electrical film resistivity was measured using a four-point probe technique. The internal stress and adhesion of films were determined using the bending-plate method and a microtribometer, respectively. The deposition process of rf magnetron sputtering was studied using a quadrupole mass filter system. The results indicated that an increase in Ar gas pressure during sputtering deposition increased the atomic ratio B/La in LaB films. The most preferable Ar gas pressure for stoichiometric LaB6 formation was found to 10-1Pa and this was also suitable for producing high-quality electrode films. The main crystalline orientation of the sputtered films was (100), which was the orientation of low work function (2.4-2.5eV) in crystals.

Mechanical and Electrical Properties of rf Sputtered LaB6 Thin Films on Glass Substrates. Kajiwara, T., Urakabe, T., Sano, K., Fukuyama, K., Watanabe, K., Baba, S., Nakano, T., Kinbara, A.: Vacuum, 1990, 41[4-6], 1224-8