Dynamic and non-equilibrium effects which involved interactions between D and radiation-induced defects were studied during D implantation. Measurements of the neutron yield due to the D(d,n)3He reaction as a function of time during 30keV D implantation, together with theoretical analyses, provided information on the dynamics of the defect interactions. The cumulative neutron yield exhibited a power-law behavior, and the exponent of the power law indicated that diffusion and desorption processes controlled the neutron yield behavior. By comparing the observed time dependence of the neutron yield with numerical estimates which were based upon model calculations, the D diffusion coefficient during implantation was estimated to be about 5 x 10-13cm2/s. This suggested that the vacancy-mediated diffusion of trapped D was the predominant migration channel during implantation. The neutron yield rate exhibited a monotonic increase as a function of time, with a characteristic peak structure. These peaks were attributed to non-linear D dynamics which were associated with microstructural changes in the sample.

Dynamics and Nonlinear Effects during Deuterium Implantation of Copper. K.Krishan, B.Panigrahi: Solid State Phenomena, 1995, 42-43, 39-48