Diffusion in films which were as thin as 3.5nm was studied by using doped poly-Si/SiO2/Si samples. The data for As diffusion could be described:

D (cm2/s) = 2.3 x 103 exp[-5.3(eV)/kT]

It was found that a 2-boundary model could be used to characterize the diffusion.

T.Matsuura, J.Murota, N.Mikoshiba, I.Kawashima, T.Sawai: Journal of the Electrochemical Society, 1991, 138[11], 3474-80