Rutherford 4He ion back-scattering studies were made of implanted Cl in a thermal oxide film on Si. The Cl diffusion coefficient was deduced at various temperatures by using a simulation technique, and it was found that the results could be described by:

D (cm2/s) = 1.0 x 10-12 exp[-0.5(eV)/kT]

A.S.Vengurlekar, K.V.Ramanathan, V.T.Karulkar, V.P.Salvi: Journal of the Electrochemical Society, 1985, 132[5], 1172-7