The diffusion of ion-implanted Cs in thermally grown oxide was studied at 700 to 1000C using Rutherford back-scattering spectrometry. Samples of Si were oxidized, implanted with 5 x 1014/cm2 of 133Cs at 145keV, and annealed in N. The diffusivity was found to be described by:

D (cm2/s) = 5.0 x 10-1 exp[-2.9(eV)/kT]

B.J.Fishbein, J.D.Plummer: Applied Physics Letters, 1987, 50[17], 1200-2