The concentration of D which was implanted into Si decreased, as the annealing temperature was increased, and fell to the background level at 600C. In Si/SiO2 systems, the concentration of implanted D in the oxide again decreased as the annealing temperature was increased, and fell to the background level at 900C. The diffusion of D in the oxide could be described by:

D (cm2/s) = 1.0 x 10-2 exp[-1.9(eV)/kT]

H.Park, C.R.Helms: Journal of the Electrochemical Society, 1992, 137[7], 2042-6