The distribution of O in a 16SiO2-18SiO2 thin-film structure was determined by using secondary ion mass spectrometry. It was deduced that the diffusivity at 1200 to 1400C could be described by:

D (cm2/s) = 2.6 x 100 exp[-4.7(eV)/kT]

J.C.Mikkelsen: Applied Physics Letters, 1984, 45[11], 1187-9