Thin films of the oxide were decomposed under an ultra-high vacuum, at 760 to 850C. By measuring the remaining oxide thickness as a function of time, it was possible to deduce the diffusivity of SiO. It was found that the results could be described by:

D (cm2/s) = 1.48 x 10-3 exp[-3.2(eV)/kT]

H.E.Sasse, U.König: Journal of Applied Physics, 1990, 67[10], 6194-6