By using electrical resistance measurements, the electrotransport and diffusion of H in Ta was studied (table 166). It was found that the H diffusion coefficient increased with increasing sample purity. It was suggested that impurities affected the H mobility via the electronic properties.

B.A.Merisov, G.J.Khadzhai, V.I.Khotkevich: Fizika Metallov i Metallovedenie, 1978, 45[2], 440-2