The diffusion of 85Kr in single crystals was studied after 15keV Kr implantation to doses of between 3.7 x 1013 and 3.7 x 1015/cm2. Two diffusion mechanisms were identified. One of them operated at 150 to 300C, with an associated activation enthalpy of 1.21eV. The other operated at 300 to 450C, with an associated activation enthalpy of 2.3eV. The first process corresponded to interstitial diffusion in the presence of extrinsic or collision-produced single-vacancy traps; with an activation enthalpy of 1.28 to 1.78eV. The second process was less clear, but was suggested to correspond to interstitial diffusion in the presence of small vacancy clusters or small gas clusters; with or without concurrent radiation-damage annealing. Diffusion of Ion-Implanted Kr in RbCl and the Effects of Radiation Damage. P.P.Pronko, R.Kelly: Radiation Effects, 1970, 3[3-4], 161-7

 

Table 149

Diffusion of 22Na in RbCl Single Crystals

 

Temperature (C)

D (cm2/s)

377.2

4.77 x 10-11

382.8

5.40 x 10-12

408.4

7.75 x 10-11

409.7

8.62 x 10-12

411.8

1.80 x 10-11

437.0

1.40 x 10-11

448.2

1.39 x 10-10

472.2

2.80 x 10-11

473.9

1.96 x 10-10

488.0

2.53 x 10-10

531.9

1.64 x 10-10

541.9

5.38 x 10-10

542.8

3.08 x 10-10

563.0

4.72 x 10-10

587.6

8.77 x 10-10

613.2

2.28 x 10-9

634.7

3.67 x 10-9

655.4

7.21 x 10-9

678.0

1.19 x 10-8

702.5

2.41 x 10-8

707.0

2.64 x 10-8