It was found that the diffusion data for Si, at 700 to 1000C, could be described by:

D (cm2/s) = 2.2 x 10-2 exp[-12.7(kcal/mol)/RT]

V.N.Lozovskii, N.F.Politova, E.V.Shutova: Fizika Metallov i Metallovedenie, 1968, 26[2], 374-5