The techniques of H-introduction by mechanical abrasion, and thermal evolution spectroscopy, were applied to the determination of H diffusivity in high-purity Al and an Al-1000ppm[at]Si dilute alloy. The data for high-purity Al could be described by:

D (cm2/s) = 3.0 x 10-2 exp[-7.1(kcal/mol)/RT]

The diffusivities were larger than those previously reported. It was suggested that the interstitial mechanism predominated in high-purity Al; even in the low-temperature region. The binding energy of a H atom to a Si atom was estimated to be equal to 16kJ/mol.

S.Hayashi: Japanese Journal of Applied Physics - 1, 1998, 37[3A], 930-7