Markers (15nm) of W were deposited between Cu and Al thin-film bilayers, and the displacements were measured during the growth of Al2Cu at 160 to 250C. It was found that the diffusivity could be described by:

D (cm2/s) = 4.0 x 10-1 exp[-1.25(eV)/kT]

These results agreed with those for bulk material.

H.T.G.Hentzell, K.N.Tu: Journal of Applied Physics, 1983, 54[12], 6929-37