The migration of B in implanted amorphous samples was studied by means of secondary ion mass spectrometry. By comparing the secondary ion mass spectrometric profiles with computer simulations, the diffusivity at 300 to 400C was estimated. It was found that the results could be described by:

D (cm2/s) = 1.77 x 10-3 exp[-1.63(eV)/kT]

F.La Via, K.T.F.Janssen, A.H.Reader: Applied Physics Letters, 1992, 60[6], 701-3