Thin (50nm) films of Cu were grown onto a thick (1μm) Ta layer, by using the ionized metal plasma technique, and were annealed in a rapid thermal system at 400 to 800C for 60 to 180s. Diffusion profiles were obtained using secondary ion mass spectroscopy. The Ta diffusion coefficient could be described by:

60s:     D(cm2/s) = 2.07051 x 10-15exp[-0.1773(eV)/kT]

180s:     D(cm2/s) = 2.1271 x 10-15exp[-0.1753(eV)/kT]

S.W.Loh, D.H.Zhang, C.Y.Li, R.Liu, A.T.S.Wee: International Journal of Modern Physics B, 2002, 16[1-2], 100-7