The diffusive behavior of Si was studied at 1400 to 1600C. The results could be described by:

D (cm2/s) = 1.4 x 10-2 exp[-23.7(kcal/mol)/RT]

A.Majdic, D.Graf, H.Schenck: Archiv für Eisenhüttenwesen, 1969, 40[8], 627-30