The diffusion of Si into amorphous alloys was studied at 297.6 and 373C by using composition versus depth profiles which were revealed by Auger ion milling. The value of the diffusion constant at 298C was equal to 4.4 x 10-23m2/s while, at 373C, it was equal to 2.8 x 10-21m2/s. Both values were independent of the composition. This indicated that the rate-limiting process in the diffusion of Si was independent of any structural changes which occurred as the composition was varied. The diffusion of Si into Fe82B18 could be described by:

D (cm2/s) = 5.7 x 100 exp[-2.0(eV)/kT]

It was suggested that the diffusion of Si involved a mechanism which was similar to the interstitial one for B.

F.E.Luborsky: Journal of Applied Physics, 1983, 54[10], 5732-8