The migration of implanted 15N during post-implantation annealing was studied at 400, 450 and 500C by using nuclear resonance broadening techniques. During the later stages of annealing, the N concentration in the unimplanted region reached equilibrium with the implanted layer. From these observations, it was possible to deduce the diffusion coefficients at temperatures which were some 500C lower than those previously used:

D (cm2/s) = 6.0 x 10-2 exp[-1.87(eV)/kT]

J.Hirvonen, A.Anttila: Applied Physics Letters, 1985, 46[9], 835-6