The diffusion of 32P which had been implanted into the amorphous metal was studied at 573 to 644K. Depth profiling of the as-implanted or diffusion-broadened profiles was carried out by using serial sectioning and ion beam sputtering techniques. It was found that the diffusivity at the above temperatures ranged from 9.0 x 10-24 to 2.3 x 10-20m2/s. The data could be described by:

D (cm2/s) = 1.0 x 108 exp[-3.1(eV)/kT]

J.Horvath, K.Freitag, H.Mehrer: Crystal Lattice Defects and Amorphous Materials, 1986, 13[1], 15-23