It was recalled that previous work had centred on the lattice location of 111In which had been implanted into type-IIa diamond. The first studies were made here of 111In which had been implanted into various defect-rich diamond systems. The defect systems which were investigated included N in various configurations, B, H and vacancies. The use of 2-dimensional conversion-electron emission channelling permitted the system to be studied in greater detail than with conventional 1-dimensional conversion-electron emission channelling. Together with acquisition of the conversion-electron emission channelling spectra for all of the major channelling axes, this yielded a comprehensive data set. The spectra were consistent with a pure substitutional fraction as well as with another fraction which was located some 0.045nm from the substitutional; along a <111> direction. Previous measurements had lumped these 2 components together as being substitutional or near-substitutional. The pure substitutional fraction was suggested to be in a defect-free configuration, while the component which was displaced away from the substitutional probably involved mainly the divacancy plus another nearby defect. The results exhibited no dependence upon impurity type, even after annealing. If In complexing with these defects occurred, it was concluded that it did not measurably affect the channelled spectra nor, therefore, the projected lattice location of the 111In probe. The origin of the random fraction which had been measured in previous studies was suggested to have been partially due to In which was in various multi-vacancy complexes. Overall, the data indicated the importance of vacancies (complexes) in the final configuration of In after implantation into diamond.

Study of Indium-Defect Interactions in Diamond using Two-Dimensional Conversion-Electron Emission Channelling. B.P.Doyle, E.J.Storbeck, U.Wahl, S.H.Connell, J.P.F.Sellschop, Isolde: Journal of Physics - Condensed Matter, 2000, 12[1], 67-78