Experiments which involved photoluminescence excitation, transmission and quenching were used to analyse the photochromic behaviour of vacancy-related complexes. The 2.156, 1.945 and 1.68eV optical centres in chemical vapour deposited samples were attributed to the neutral N-vacancy, negative N-vacancy and neutral Si-vacancy ([Si-V]0) centres, respectively. An oscillatory behaviour of the excitation spectrum of the 1.68eV luminescence was observed and, from the threshold of the oscillations, a position of Ec -2.05eV was suggested for the ground state of the [Si-V]0 centre.

Photochromism of Vacancy-Related Centres in Diamond. K.Iakoubovskii, G.J.Adriaenssens, M.Nesladek: Journal of Physics - Condensed Matter, 2000, 12[2], 189-99