Thin (50nm) films of Cu were grown onto a thick (1μm) Ta layer, by using the ionized metal plasma technique, and were annealed in a rapid heating system at 400 to 800C for 60 or 180s. Diffusion profiles were obtained using secondary ion mass spectroscopy. The Cu diffusion coefficients could be described by:

60s:     D(cm2/s) = 3.0246 x 10-15exp[-0.1747(eV)/kT]

180s:     D(cm2/s) = 2.7532 x 10-15exp[-0.1737(eV)/kT]

S.W.Loh, D.H.Zhang, C.Y.Li, R.Liu, A.T.S.Wee: International Journal of Modern Physics B, 2002, 16[1-2], 100-7