Diffusion of Ga implanted into α-Ti was studied at 873 to 1123K by using the Rutherford back-scattering technique. The measurements showed that the diffusion coefficient obeyed:

D(m2/s) = 2.5 x 10-3exp[-308(kJ/mol)/RT]

M.Behar, J.H.R.Dos Santos, F.Bernardi, F.Dyment: Defect and Diffusion Forum, 2003, 213-215, 1-18