By using Gorsky-effect measurements and high-purity V, it was shown that no effect of impurities upon the diffusion coefficient of H was noticeable for residual resistivity ratios that were greater than 18. At temperatures ranging from -100 to 300C, the results for higher-purity V were described by:

H:     D (cm2/s) = 3.1 x 10-4 exp[-0.045(eV)/kT]

D:     D (cm2/s) = 3.8 x 10-4 exp[-0.073(eV)/kT]

In the case of samples with a residual resistivity ratio of 2.5, the diffusivity of H was markedly reduced. Here, the results were described by:

D (cm2/s) = 2.2 x 10-4 exp[-0.065(eV)/kT]

U.Freudenberg, J.Völkl, J.Bressers, G.Alefeld: Scripta Metallurgica, 1978, 12[2], 165-7