Tritium diffusion in a V-4Cr-4Ti (NIFS-Heat-2) alloy was studied using tritium tracer: a small amount of T was implanted into the specimen surface, and the specimen was diffusion-annealed at 373 to 573K. The diffusion depth profile of T in the specimen was measured using the T imaging plate technique. The obtained diffusion coefficient was expressed as:

D(cm2/s) = 7.5 x 10-4exp[-0.13(eV)/kT]

K.Hashizume, J.Masuda, T.Otsuka, T.Tanabe, Y.Hatano, Y.Nakamura, T.Nagasaka, T.Muroga: Journal of Nuclear Materials, 2007, 367-370, 876-81