Wafers of 6H-type material were implanted with 50keV Al+ ions, at room temperature or 1700C, to doses ranging from 1.4 x 1014 to 1.4 x 1016/cm2. When compared to samples which had been implanted at room temperature, the samples which had been implanted at high temperatures exhibited considerable Al redistribution. The Al diffusion was shown to be a transient effect, with differing decay times in the near-surface region and in the bulk. Investigation of the structure indicated that, in the near-surface region, dislocation loops grew in size and Al precipitates were formed as the Al dose which was implanted at high temperatures was increased. Changes in the structure of the implanted layer could have a strong effect upon the redistribution of Al. The observed redistribution could be explained by a dissociative diffusion mechanism during high-temperature implantation.

Transient Enhanced Diffusion of Aluminum in SiC during High-Temperature Ion Implantation I.O.Usov, A.A.Suvorova, V.V.Sokolov, Y.A.Kudryavtsev, A.V.Suvorov: Journal of Applied Physics, 1999, 86[11], 6039-42