The migration of Hg under saturated vapor pressure conditions was studied at 160 to 403C. Two-component profiles were observed and the diffusion was rate-limited. The Arrhenius plots comprised 2 straight lines, with a sudden change of gradient at 275C:

< 275C:     D (cm2/s) = 3.4 x 10-11 exp[-0.60(eV)/kT]

> 275C:     D (cm2/s) = 3.5 x 10-4 exp[-1.46(eV)/kT]

This was attributed to a change in diffusion mechanism.

M.U.Ahmed, E.D.Jones, J.B.Mullin, N.M.Stewart: Journal of Crystal Growth, 1996, 159, 1141-7