Cadmium diffusion in Cu(In,Ga)Se2 layers was determined by means of radiotracer techniques. Depth profiles of 109Cd were determined by ion-beam sputter-sectioning after isothermal diffusion at 197 to 425C. The diffusivity could be described by:

D(cm2/s) = 4.8 x 10-4exp[-1.04(eV)/kT]

Atom-probe tomography of a sample saturated with natural Cd at 450C revealed its homogeneous incorporation over the crystal volume.

K.Hiepko, J.Bastek, R.Schlesiger, G.Schmitz, R.Wuerz, N.A.Stolwijk: Applied Physics Letters, 2011, 99[23], 234101