Cadmium diffusion was studied at 165 to 345C. The CuInSe2 films were deposited by using the flash evaporation technique. A thin film of Cd was deposited and annealed at various temperatures. The Cd depth profiles were determined by using the Rutherford back-scattering technique. These profiles were fitted to a complementary error function and the diffusion coefficients at four temperatures were evaluated. The diffusion coefficients could be described by:

D(m2/s) = 2.38 x 10-13 exp[-0.47(eV)/kT]

It was shown that the cadmium diffused via copper vacancies.

A.P.Kumar, K.V.Reddy: Semiconductor Science and Technology, 1997, 12[8],  966-9