Nickel diffusion in CuInSe2 thin films was studied at 430 to 520C. Thin films of CuInSe2 were prepared by selenization of CuInSe2-Cu-In multilayered structures on a glass substrate. A thin film of Ni was deposited and annealed at various temperatures. The surface morphologies of the Ni-diffused and undiffused CuInSe2 films were investigated using scanning electron microscopy. The alteration of Ni concentration in the CuInSe2 thin film was measured using energy-dispersive X-ray fluorescence techniques. These

measurements were fitted to a complementary error function solution and the diffusion coefficients at four different temperatures were evaluated. The diffusion coefficients of Ni in CuInSe2 films were estimated from concentration profiles at 430 to 520C and gave:

D(cm2/s) = 1.86 x 10-7exp[-0.68(eV)/kT]

A.Celik, U.Cevik, E.Bacaksiz, N.Celik: Thin Solid Films, 2009, 517[9], 2851-4