Electrical conduction and the diffusion of copper vacancies in non-stoichiometric cuprous selenide was studied at 500 to 850C. It was found that the diffusion constant of the Cu vacancies had extremely high absolute values. Its temperature dependence could be described by:

D(cm2/s) = 0·36 exp[-0.27(eV)/kT]

B.Čelustka, Z.Ogorelec: Journal of Physics and Chemistry of Solids, 1966, 27[6-7], 957-60