The diffusion behavior of a C-acceptor impurity in a p+-n+ GaAs tunnel junction with a heavily C-doped p+-layer was investigated. The diffusion coefficients of C were deduced from the degradation rates of the peak current density of the GaAs tunnel diodes. The current-induced diffusion coefficient of C under forward bias operations at 2kA/cm2 was given by:

D(cm2/s) = 1.5 x 10-13exp[-0.47(eV)/kT]

J.H.Oh, N.Hayakawa, M.Konagai: Japanese Journal of Applied Physics – 1, 1997, 36[10], 6300-1