The diffusion of Cd into single crystals was investigated at 756 to 1201C. The penetration profiles, as measured by means of secondary ion mass spectroscopy and spreading-resistance profiling, agreed with each other and were consistent with the operation of a kick-out diffusion mechanism. Under 1atm of As vapour pressure, and electrically intrinsic conditions, the Cd diffusivity results could be described by:

D (cm2/s) = 1.76 x 104 exp[-4.80(eV)/kT]

G.Bösker, N.A.Stolwijk, H.Mehrer, U.Södervall, W.Jäger: Journal of Applied Physics, 1999, 86[2], 791-9