Low p-type surface concentrations were introduced at high temperatures by using a Ga-Cd alloy as a diffusion source. Concentration profiles were determined by using electrochemical profiling techniques. The resultant profiles

were of complementary error function type. The data were described by:

D (cm2/s) = 1.10 x 10-13 exp[-2.12(eV)/kT]

when pure Cd was used as a diffusion source, together with a 5nm SiO2 overlayer. When a Ga-1at%Cd alloy was used as a source, at 800 to 850C, the diffusion could be described by:

D (cm2/s) = 1.29 x 10-14 exp[-2.17(eV)/kT]

D.K.Gautam, Y.Nakano, K.Tada: Japanese Journal of Applied Physics, 1991, 30[6], 1176-80