Cadmium diffusion into GaAs single crystals was investigated at 804 to 1201C. Penetration profiles measured by secondary ion mass spectroscopy and spreading-resistance profiling were reproduced numerically on the basis of the kick-out diffusion mechanism. This permitted the deduction, from the Cd profiles, of Ga self-diffusivities caused by doubly positively charged Ga self-interstitials. Reduced to an As vapour pressure of 1atm and electronically intrinsic conditions, the IGa2+-mediated Ga self-diffusion results were described by:

D(cm2/s) = 3.5 x 104 exp[-5.74(eV)/kT]

G.Bösker, N.A.Stolwijk, U.Södervall, W.Jäger: Defect and Diffusion Forum, 1997, 143-147, 1109-16