The Fe was diffused, from a spin-on glass film, onto n-type wafers at 700 to 900C. The diffusivities, as determined using junction-depth and conductivity techniques, could be explained in terms of a model which assumed the existence of exhaustible diffusion sources. It was found that the diffusivity was described by:

D (cm2/s) = 1.0 x 103 exp[-2.7(eV)/kT]

J.Ohsawa, H.Kakinoki, H.Ikeda, M.Migitaka: Journal of the Electrochemical Society, 1990, 137[8], 2608-11