The diffusion of implanted Zn was studied, at 625 to 850C, by means of secondary ion mass spectrometry. A substitutional-interstitial diffusion mechanism was suggested to explain how deviations of the local Ga interstitial concentration from its equilibrium value regulated Zn diffusion. The Ga interstitial diffusion coefficient was described by:

D (cm2/s) = 4.39 x 10-1 exp[-2.14(eV)/kT]

M.P.Chase, M.D.Deal, J.D.Plummer: Journal of Applied Physics, 1997, 81[4], 1670-6