Isotopically controlled heterostructures were used to study Ga self-diffusion by using secondary-ion mass spectrometry. This approach produced a near-ideal random walk situation that was free of perturbations arising from electric fields, mechanical stresses, or chemical potentials. It was found that the Ga self-diffusion coefficient in intrinsic material could be described by:

D (cm2/s) = 4.3 x 101 exp[-4.24(eV)/kT]

over 6 orders of magnitude, at 800 to 1225C, under As-rich conditions.

L.Wang, L.Hsu, E.E.Haller, J.W.Erickson, A.Fischer, K.Eberl, M.Cardona: Physical Review Letters, 1996, 76[13], 2342-5