An investigation was made of self-diffusion using secondary ion mass spectroscopy. The isotope heterostructures consisted of epitaxial layers grown with one or more stable isotopes of host crystal elements using molecular beam epitaxy. Gallium self-diffusion in GaAs was investigated using 69GaAs/71GaAs isotope heterostructures. The Ga self-diffusion coefficient in intrinsic GaAs under As-rich ambients was accurately described by:

D(cm2/s) = 43 exp[-4.24(eV)/kT]

E.E.Hauer, L.Wang: Defect and Diffusion Forum, 1997, 143-147, 1067-78