The intrinsic diffusivity of Li in GaAs was determined at 10 to 70C. The Li migration was studied in weakly Li-doped p-type GaAs:Zn at a Schottky junction during zero-bias annealing. Using data on effective diffusivity and the Li-Zn complex dissociation frequency an intrinsic diffusion coefficient for interstitial Li in GaAs was derived,

D(cm2/s) = 1 x 10-2 exp[-0.67(eV)/kT]

K.Leosson, H.P.Gislason: Materials Science Forum, 1997, 258-263, 1827-32