In-diffusion profiles of S were determined by means of secondary ion mass spectroscopy. In order to evaluate the shapes of the profiles, a set of coupled reaction-diffusion equations was solved numerically. From the simulated non-equilibrium profiles of in-diffusing S, which migrated via the kick-out mechanism, both the diffusion coefficient and the equilibrium concentration of As self-interstitials were determined simultaneously. The S diffusivity at 950 to 1100C could be described by:

D (cm2/s) = 1.9 x 10-3 exp[-2.4(eV)/kT]

B.F.Scholz, P.Werner, U.Gösele, N.Engler, H.S.Leipner: Journal of Applied Physics, 2000, 88[12], 7045-50