The Zn was diffused into Si-doped samples, from a ZnAs2 source, at 575 to 700C in sealed evacuated quartz tubes. The samples were characterized by depth-profiling the photoluminescence at various temperatures. The photoluminescence spectra contained characteristic emissions which were associated with deep levels of Ga and As vacancies. A detailed analysis of the spectra revealed the role that was played by vacancies in Zn diffusion. It was found that the data could be described by:

D (cm2/s) = 2.05 x 100 exp[-2.28(eV)/kT]

N.H.Ky, L.Pavesi, D.Araujo, J.D.Ganière, F.K.Reinhart: Journal of Applied Physics, 1991, 69[11], 7585-93