The migration of Zn in AlGaAs at 650C was studied by using the sealed ampoule method and a ZnAs2 source. It was found that the results for zero Al content could be described by:

D (cm2/s) = 2.6 x 101 exp[-2.47(eV)/kT]

V.Quintana, J.J.Clemencon, A.K.Chin: Journal of Applied Physics, 1988, 63[7], 2454-5