The diffusion of Sb in high-purity Ge was studied between 600 and 920C. Secondary ion mass spectrometry and spreading resistance profiling were used to determine the concentration profiles of the chemically and electrically active dopants. The results could be described by:

D (cm2/s) = 1.67 x 101exp[-2.55(eV)/kT]

S.Brotzmann, H.Bracht: Journal of Applied Physics, 2008, 103[3], 033508