The diffusivity of Si was measured by monitoring the diffusion of surface deposits of 30Si, and determining the concentration profiles by using resonance broadening techniques. A slight difference in the results was found between n-type and p-type material. The diffusion in the intrinsic material, at 650 to 900C, was described by:

D (cm2/s) = 2.4 x 10-1 exp[-2.9(eV)/kT]

J.Räisänen, J.Hirvonen, A.Anttila: Solid State Electronics, 1981, 24[4], 333-6