Elemental zinc was diffused, using the close-tube method, into InAs and InAs1-xSbx solid solution (x = 0.10 to 0.12). All the samples were (100)-oriented. The diffusion temperatures were 500, 400 and 350C. Shallow junction depths (∼1μm) were obtained. The temperature dependence of the effective diffusion coefficient of Zn was described by:
D(cm2/s) = 1.6 x 10-4 exp[-1.07(eV)/kT]
H.Khald, H.Mani, A.Joullie: Journal of Applied Physics, 1988, 64[9], 4768-70