Carrier concentrations, diffusion coefficients and shapes of the Zn profiles in InP layers were compared for various annealing conditions. The Zn-implanted InP:S (4 x 1018/cm3 of active dopant) bulk samples were investigated by implanting them to a fluence of 1016/cm2 at an energy of 150keV and then

coating with a 100nm-thick AlN polycrystalline film using sputter deposition followed by annealing (500 to 900C). After removing the AlN films, the extent of diffusion of the implanted species was characterized by using secondary ion mass spectrometry. The results were described by:

P over-pressure:     D(cm2/s) = 9.2 x 10-2 exp[-1.61(eV)/kT]

under vacuum:     D (cm2/s) = 1.0 x 10-3 exp[-1.36(eV)/kT])

R.Jakieła, A.Barcz, E.Wegner, A.Zagojski: Vacuum, 2005, 78[2-4], 417-22